| Title: |
Scanning positron microscopy: Non-destructive imaging of plastic deformation in the micrometer range |
| Author(s): |
M. Haaks  |
| Journal: |
Cirp Annals-Manufacturing Technology |
| Year: |
2008 |
| Volume: |
57 |
| Issue: |
1 |
| Pages: |
537--540 |
| DOI: |
10.1016/j.cirp.2008.03.109 |
| File URL: |
http://www.sciencedirect.com/science/article/pii/S0007850608001121 |
| Abstract: |
Positron annihilation spectroscopy (PAS) provides extreme sensitivity for the detection of lattice defects from a concentration of 10(-6) defects per atom. PAS is a versatile and non-destructive tool for the study of plasticity and fatigue in solid-state materials. Scanning positron microscopy (SPM) expands the capabilities of PAS into the micron range. Recent results of defect imaging by SPM on plastically deformed and fatigued metals and semiconductors will be presented in this paper. A new method estimating the remaining useful life of fatigued components by employing the S-parameter as a precursor for failure will be introduced. (C) 2008 CIRP. |
