| Title: |
Spatially resolved detection of point defects in the vicinity of scratches on GaAs by the Bonn positron microprobe |
| Author(s): |
T. E. M. Staab  , C. Zamponi , M. Haaks , I. Müller , S. Eichler and K. Maier |
| Journal: |
Mater. Sci. Forum |
| Year: |
2004 |
| Volume: |
445-6 |
| Pages: |
510-512 |
| DOI: |
10.4028/www.scientific.net/MSF.445-446.510 |
| File URL: |
www.scientific.net/MSF.445-446.510 |
| Abstract: |
Spatially resolved positron annihilation spectroscopy has been used for materials science investigations. In undoped semi-insulating GaAs we investigated the sub-surface damage due to scratches produced with a single-diamond grain. We. clearly identify different regions of damage, which have been characterized both by scanning electron microscopy and the positron microbeam. The. latter reveals signs of plastic deformation in front of the scratch indicated by the defects detected. The observed ductile behavior of GaAs at room temperature is discussed, considering how this usually very brittle material can undergo a brittle-to-ductile transition when exposed to high pressure. |
